Title :
Room temperature UV lasing from photopumped ZnCdS/ZnS quantum wells
Author :
Ozanyan, K.B. ; Nicholls, J.E. ; O´Neill, M. ; May, L. ; Hogg, J.H.C. ; Hagston, W.E. ; Lunn, B. ; Ashenford, D.E.
Author_Institution :
Dept. of Appl. Phys., Hull Univ., UK
Abstract :
We demonstrate optically pumped lasing at room temperature from ZnS/ZnCdS QW structures grown on (100) GaP substrates by MBE. In the structures with the lowest Cd-composition, lasing at wavelengths as low as 333 nm (at 8 K) is observed. We present spectroscopic evidence which suggests that the stimulated emission involves states in the low-energy tail of an inhomogeneously broadened excitonic resonance. While the gain is excitonic at low thresholds, a transition to an electron-hole plasma mechanism may occur if the pump power approaches 100 kW.cm-2
Keywords :
zinc compounds; 300 K; 333 nm; 8 K; GaP; GaP substrates; MBE growth; QW structures; UV lasing; ZnCdS-ZnS; ZnCdS/ZnS quantum wells; electron-hole plasma mechanism; excitonic gain; inhomogeneously broadened excitonic resonance; lasing; low-energy tail; optically pumped lasing; pump power; room temperature; spectroscopic evidence; stimulated emission;
Conference_Titel :
Wide Bandgap Semiconductor Light Emitters (Digest No: 1996/233), IEE Colloquium on
Conference_Location :
London
DOI :
10.1049/ic:19961228
