Title :
RF power performance of submicron MESFET on hydrogen terminated polycrystalline diamond
Author :
Rossi, M.C. ; Calvani, P. ; Conte, G. ; Camarchia, V. ; Cappelluti, F. ; Ghione, G. ; Ciccognani, W. ; Pasciuto, B. ; Limiti, E. ; Dominijanni, D. ; Giovine, E.
Author_Institution :
Electron. Eng. Dept., Univ. of Roma Tre, Rome, Italy
Abstract :
Diamond is in principle the highest performance widegap semiconductor. Its outstanding electronic and thermal properties make it an attractive material for high power radiofrequency (RF) and microwave electron devices. In this paper, the authors present RF power measurements of submicron H-terminated FETs on polycrystalline diamond up to 2 GHz, showing the potential of such substrate for the development of microwave power devices.
Keywords :
Schottky gate field effect transistors; diamond; microwave field effect transistors; microwave power transistors; substrates; RF power performance; hydrogen terminated polycrystalline diamond; microwave power device; submicron MESFET; Costs; Doping; FETs; Hydrogen; MESFETs; Microwave devices; Plasma temperature; Power measurement; Radio frequency; Substrates;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378251
