DocumentCode
3059244
Title
RF power performance of submicron MESFET on hydrogen terminated polycrystalline diamond
Author
Rossi, M.C. ; Calvani, P. ; Conte, G. ; Camarchia, V. ; Cappelluti, F. ; Ghione, G. ; Ciccognani, W. ; Pasciuto, B. ; Limiti, E. ; Dominijanni, D. ; Giovine, E.
Author_Institution
Electron. Eng. Dept., Univ. of Roma Tre, Rome, Italy
fYear
2009
fDate
9-11 Dec. 2009
Firstpage
1
Lastpage
2
Abstract
Diamond is in principle the highest performance widegap semiconductor. Its outstanding electronic and thermal properties make it an attractive material for high power radiofrequency (RF) and microwave electron devices. In this paper, the authors present RF power measurements of submicron H-terminated FETs on polycrystalline diamond up to 2 GHz, showing the potential of such substrate for the development of microwave power devices.
Keywords
Schottky gate field effect transistors; diamond; microwave field effect transistors; microwave power transistors; substrates; RF power performance; hydrogen terminated polycrystalline diamond; microwave power device; submicron MESFET; Costs; Doping; FETs; Hydrogen; MESFETs; Microwave devices; Plasma temperature; Power measurement; Radio frequency; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location
College Park, MD
Print_ISBN
978-1-4244-6030-4
Electronic_ISBN
978-1-4244-6031-1
Type
conf
DOI
10.1109/ISDRS.2009.5378251
Filename
5378251
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