Title :
High work function metal gate and reliabitity improvement for MOS device by integration of TiN/MoN and HfAlO dielectirc
Author :
Fu, Chung-Hao ; Chang-Liao, Kuei-Shu ; Lu, Hsueh-Yueh ; Li, Chen-Chien ; Wang, Tien-Ko
Author_Institution :
Dept. of Eng. & Syst. Sci., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
Electrical characteristics and thermal stability of MOS devices with TiN/MoN metal stacks and various gate dielectrics were studied in this work. High work function gate is achieved by integrating TiN/MoN stack with HfAlO dielectric. Reliability characteristics, in terms of stress-induced leakage current and stress-induced Vfb shift, are improved for metal gate stack on high-k dielectric in comparison with that on SiO2.
Keywords :
MIS devices; aluminium compounds; hafnium compounds; leakage currents; molybdenum compounds; semiconductor device reliability; silicon compounds; thermal stability; titanium compounds; HfAlO; MOS device; SiO2; TiN-MoN; gate dielectrics; high work function metal gate; metal stacks; stress-induced leakage current; stress-induced voltage shift; thermal stability; Channel bank filters; Crystallization; Dielectric devices; High K dielectric materials; High-K gate dielectrics; Leakage current; MOS devices; Rapid thermal annealing; Thermal stability; Tin;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378252
