Subband parameters in strained (110) silicon films from the Hensel-Hasegawa-Nakayama model of the conduction band

In this work we demonstrate that the HHN model allows to accurately describe the dependences of the subband energies and effective masses in (-110) thin silicon films. In order to do so, we appropriately rotate the HHN Hamiltonian for each pair of the valleys and resolve the subband structure numerically. The zero boundary conditions for the wave functions at the interfaces are applied.