Title :
Investigating the BJT-like behavior of MOSFETs in ultra-deep-submicron CMOS technologies with significant gate current
Author :
Bohannon, E. ; Washburn, C. ; Mukund, P.R.
Author_Institution :
Rochester Inst. of Technol., Rochester, NY, USA
Abstract :
In conclusion, this work investigated the BJT-like behavior of MOSFETs in a 65 nm CMOS technology with significant gate current. The results show that the effects of IG can be minimized at the expense of power, voltage headroom, and matching. Also, performance metrics similar to BJTs can be used, with caution, to monitor the impact of gate current on MOSFETs.
Keywords :
CMOS integrated circuits; MOSFET; bipolar transistors; semiconductor device models; BJT; CMOS; MOSFET; bipolar junction transistors; gate current; metal-oxide-semiconductor field effect transistors; size 65 nm; CMOS technology; Circuit analysis; Educational institutions; Frequency; Impedance; MOSFETs; Measurement; Performance gain; Tunneling; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378269
