• DocumentCode
    3059623
  • Title

    Investigating the BJT-like behavior of MOSFETs in ultra-deep-submicron CMOS technologies with significant gate current

  • Author

    Bohannon, E. ; Washburn, C. ; Mukund, P.R.

  • Author_Institution
    Rochester Inst. of Technol., Rochester, NY, USA
  • fYear
    2009
  • fDate
    9-11 Dec. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In conclusion, this work investigated the BJT-like behavior of MOSFETs in a 65 nm CMOS technology with significant gate current. The results show that the effects of IG can be minimized at the expense of power, voltage headroom, and matching. Also, performance metrics similar to BJTs can be used, with caution, to monitor the impact of gate current on MOSFETs.
  • Keywords
    CMOS integrated circuits; MOSFET; bipolar transistors; semiconductor device models; BJT; CMOS; MOSFET; bipolar junction transistors; gate current; metal-oxide-semiconductor field effect transistors; size 65 nm; CMOS technology; Circuit analysis; Educational institutions; Frequency; Impedance; MOSFETs; Measurement; Performance gain; Tunneling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2009. ISDRS '09. International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-6030-4
  • Electronic_ISBN
    978-1-4244-6031-1
  • Type

    conf

  • DOI
    10.1109/ISDRS.2009.5378269
  • Filename
    5378269
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3059623