DocumentCode
3059727
Title
RF response of PIN photodiode with avalanche multiplication using quantum dots
Author
Umezawa, Toshimasa ; Akahane, Kouichi ; Kanno, Atsushi ; Kawanishi, Tetsuyas
Author_Institution
Nat. Inst. of Inf. & Commun. Technol. (NICT), Koganei, Japan
fYear
2013
fDate
June 30 2013-July 4 2013
Firstpage
1
Lastpage
2
Abstract
We fabricate a new PIN photodiode using InAs/InAlGaAs quantum dot absorption layer with an avalanche multiplication, low breakdown temperature coefficient, and high frequency response. Multiplication factors of M = 1 to M = 12 and the RF response over 10GHz are reported.
Keywords
III-V semiconductors; aluminium compounds; avalanche diodes; frequency response; gallium arsenide; indium compounds; p-i-n photodiodes; semiconductor quantum dots; InAs-InAlGaAs; InAs-InAlGaAs quantum dot; PIN photodiode; RF response; absorption layer; avalanche multiplication; frequency 10 GHz; frequency response; multiplication factors; temperature coefficient; Absorption; Dark current; Frequency response; Junctions; Photoconductivity; Quantum dots; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location
Kyoto
Type
conf
DOI
10.1109/CLEOPR.2013.6600243
Filename
6600243
Link To Document