Title :
Self-aligned ALD AlOx T-gate footprint insulator for gate leakage current suppression in SiNx passivated AlGaN/GaN HEMTs
Author :
Meyer, David J. ; Bass, Robert ; Katzer, D. Scott ; Deen, David A. ; Binari, Steven C. ; Daniels, Kevin M. ; Eddy, Charles R., Jr.
Author_Institution :
Electron. Sci. & Technol. Div., Naval Res. Lab., Washington, DC, USA
Abstract :
The devices in this study demonstrate a novel process methodology that allows for a self-aligned ALD AlO¿ gate insulator to be placed directly under the T-gate footprint and not in the access regions. After gate contact formation, standard PECVD SiN¿ passivation can be applied just as in a conventional HEMT process. Preliminary devices show promising results that this technique can be used to achieve high power mm-wave performance.
Keywords :
III-V semiconductors; aluminium compounds; atomic layer deposition; high electron mobility transistors; passivation; silicon compounds; wide band gap semiconductors; AlGaN-GaN; AlO; HEMT; PECVD; T-gate footprint insulator; gate contact formation; gate leakage current suppression; high power mm-wave performance; passivation; self-aligned ALD; Dielectrics; Gallium nitride; HEMTs; Insulation; Leakage current; MODFETs; Passivation; Plasma applications; Plasma devices; Radio frequency;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378279
