A Ka-band monolithic quasi-optic amplifier

Author

Sovero, E.A. ; Hacker, J.B. ; Higgins, J.A. ; Deakin, D.S. ; Sailer, A.L.

Author_Institution

Rockwell Inst. Sci. Center, Thousand Oaks, CA, USA

Volume

3

fYear

1998

fDate

7-12 June 1998

Firstpage

1453

Abstract

Recent advances in the development of a Ka-band quasi-optic amplifier are reported. The amplifier consists of a two-dimensional array of PHEMT power amplifiers, each of which is coupled to individual input and output slot antennas. The array of 112 amplifiers (49 mm total gate periphery) is organized into pairs operating in push-pull between a 7/spl times/8 array of input slots and an 8/spl times/8 array of orthogonal output slots. The total chip size is 12.8 mm by 13.4 mm and has a thickness of 75 /spl mu/m. It is fabricated with standard MMIC processing techniques. The amplifier provided gain from 37.5 GHz to 39.5 GHz with a peak gain approaching 9 dB at 38.6 GHz. The maximum measured output power is 29 dBm.

Keywords

HEMT integrated circuits; MMIC power amplifiers; arrays; field effect MIMIC; millimetre wave power amplifiers; slot antenna arrays; 37.5 to 39.5 GHz; 9 dB; EHF; Ka-band; PHEMT power amplifiers; monolithic quasi-optical amplifier; pseudomorphic HEMT; slot antennas; standard MMIC processing techniques; two-dimensional array; Antenna arrays; Antenna feeds; Circuits; MMICs; Microstrip antenna arrays; Microstrip antennas; Packaging; Power amplifiers; Slot antennas; Thermal management;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1998 IEEE MTT-S International

Conference_Location

Baltimore, MD, USA

ISSN

0149-645X

Print_ISBN

0-7803-4471-5

Type

conf

DOI

10.1109/MWSYM.1998.700648

Filename

700648