Germanium PIN detector on silicon grown by Sb surfactant-assisted epitaxy

In the current work, Ge PIN diodes were fabricated on Ge VS on Si substrates using Sb surfactant-assisted growth. Previous studies have shown this method minimizes the threading dislocations and results in a smooth surface. A potential concern is the unintentional doping by the Sb surfactant that continues to segregate. In the PIN devices this may be acceptable since the residual doping can be used as the n electrical contacts or used as a technique to electrically isolate the p contact from the substrate.