Title :
W-band on-wafer load-pull measurement system and its application to HEMT characterization
Author :
Alekseev, E. ; Pavlidis, D. ; Tsironis, C.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
An on-wafer large-signal characterization system has been developed for W-band frequency applications. The system is computer-controlled and employs a high-precision electromechanical W-band tuner. Its application to obtaining constant output power and gain contours as well as power saturation characteristics of submicron InP-based HEMTs is demonstrated at 77 GHz and 102 GHz.
Keywords :
III-V semiconductors; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; millimetre wave measurement; 102 GHz; 77 GHz; InP; W-band on-wafer load-pull measurement; computer-controlled system; electromechanical tuner; gain; large-signal characteristics; output power; power saturation; submicron InP HEMT; Application software; Calibration; Frequency measurement; HEMTs; Power generation; Power measurement; Probes; Radio frequency; Testing; Tuners;
Conference_Titel :
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4471-5
DOI :
10.1109/MWSYM.1998.700654
