Measuring transistor dynamic loadlines and breakdown currents under large-signal high-frequency operating conditions

Author

Verspecht, Jan ; Schreurs, Dominique ; Verspecbt, J. ; Schreurs, Dominique

Author_Institution

Hewlett-Packard NMDG, Brussels, Belgium

Volume

3

fYear

1998

fDate

7-12 June 1998

Firstpage

1495

Abstract

The "Nonlinear Network Measurement System" accurately measures dynamic loadlines and breakdown currents of microwave transistors under high-frequency large-signal operating conditions. This measurement capability allows the designer to find optimal operating conditions for a given device without the need for large-signal models. Measuring RF breakdown currents allows the designer to tackle reliability issues in a way not possible before.

Keywords

electric breakdown; microwave measurement; microwave transistors; semiconductor device reliability; semiconductor device testing; RF breakdown; breakdown currents; large-signal high-frequency operating conditions; microwave transistors; nonlinear network measurement system; optimal operating conditions; reliability issues; transistor dynamic load lines; Current measurement; Electric breakdown; Frequency measurement; Impedance matching; Microwave measurements; Microwave transistors; Phase measurement; Power amplifiers; Power system modeling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1998 IEEE MTT-S International

Conference_Location

Baltimore, MD, USA

ISSN

0149-645X

Print_ISBN

0-7803-4471-5

Type

conf

DOI

10.1109/MWSYM.1998.700658

Filename

700658