Title :
Measuring transistor dynamic loadlines and breakdown currents under large-signal high-frequency operating conditions
Author :
Verspecht, Jan ; Schreurs, Dominique ; Verspecbt, J. ; Schreurs, Dominique
Author_Institution :
Hewlett-Packard NMDG, Brussels, Belgium
Abstract :
The "Nonlinear Network Measurement System" accurately measures dynamic loadlines and breakdown currents of microwave transistors under high-frequency large-signal operating conditions. This measurement capability allows the designer to find optimal operating conditions for a given device without the need for large-signal models. Measuring RF breakdown currents allows the designer to tackle reliability issues in a way not possible before.
Keywords :
electric breakdown; microwave measurement; microwave transistors; semiconductor device reliability; semiconductor device testing; RF breakdown; breakdown currents; large-signal high-frequency operating conditions; microwave transistors; nonlinear network measurement system; optimal operating conditions; reliability issues; transistor dynamic load lines; Current measurement; Electric breakdown; Frequency measurement; Impedance matching; Microwave measurements; Microwave transistors; Phase measurement; Power amplifiers; Power system modeling; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4471-5
DOI :
10.1109/MWSYM.1998.700658
