DocumentCode
3060323
Title
Analysis of physics based model of AlGaN/GaN power HEMT with temperature compensation
Author
Huq, Hasina F. ; Polash, Bashirul
Author_Institution
Dept. of Electr. Eng., Univ. of Texas-Pan American, Edinburg, TX, USA
fYear
2009
fDate
9-11 Dec. 2009
Firstpage
1
Lastpage
2
Abstract
An AlGaN/GaN high electron mobility transistor (HEMT) model with temperature compensation is proposed. The simulation and experimental data are in close agreement within the measured temperature range. Despite of drain current degradation, the characteristics exhibit high temperature compatibility of AlGaN/GaN HEMTs.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; power HEMT; semiconductor device models; wide band gap semiconductors; AlGaN-GaN; drain current degradation; high electron mobility transistor; power HEMT; temperature compensation; Aluminum gallium nitride; Gallium nitride; HEMTs; Physics; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location
College Park, MD
Print_ISBN
978-1-4244-6030-4
Electronic_ISBN
978-1-4244-6031-1
Type
conf
DOI
10.1109/ISDRS.2009.5378298
Filename
5378298
Link To Document