Ballistic mobility degradation in scaled-down channel of a MOSFET

Ballistic transport is a collision-free carrier drift with a hope that a uni-directional electrons are accelerated to very high speeds. However, all experimental results do not show an enhanced transport behavior in ballistic channels. This is due to the stochastic motion of the carriers split along and opposite to the direction of an applied electric filed. In this paper, ballistic mobility degradation in sub micrometer channels in MOSFET was investigated.