Title :
Retention test and electrical stress correlation to anticipate EEPROM tunnel oxide reliability issues
Author :
Plantier, J. ; Aziza, H. ; Portal, J.M. ; Reliaud, C. ; Regnier, A. ; Ogier, J.L.
Author_Institution :
STMicroelectronics, Rousset, France
Abstract :
This paper shows how floating gate memory cells behavior during retention tests can be predicted relying on static stress tests. The electric high-field induced during write/erase cycles is mainly responsible for the retention time degradation because it creates intrinsic failures or traps in the EEPROM tunnel oxide.
Keywords :
EPROM; circuit reliability; correlation methods; EEPROM; correlation; electrical stress; floating gate memory cells; retention test; static stress tests; tunnel oxide reliability; write/erase cycles; Acceleration; Circuit testing; Data mining; Degradation; EPROM; Educational institutions; Probability distribution; Stress; Temperature distribution; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378306
