Title :
Proposal of heavily doped silicon between insulators MOSFETs and confirmation of their advantages by device simulation
Author :
Yamada, T. ; Miyazawa, Y. ; Nakajima, Y. ; Hanajiri, T. ; Toyabe, T. ; Sugano, T.
Author_Institution :
Bio-Nano Electron. Res. Centre, Toyo Univ., Kawagoe, Japan
Abstract :
The performance of short channel silicon between insulators (SBI) MOSFETs and the proposal of heavily doped silicon between insulators (HDSBI) MOSFETs, in which silicon region between local buried oxide (BOX) regions is heavily doped are presented. The electrical and thermal advantages in short-channel regions over conventional SBI MOSFET are verified by device simulation. Also, electrical properties of these MOSFETs considering thermal effects, impact ionisation, and quantum effect will be presented.
Keywords :
MOSFET; elemental semiconductors; heavily doped semiconductors; ionisation; silicon; Si; device simulation; heavily doped silicon between insulators MOSFET; impact ionisation; local buried oxide regions; quantum effect; short channel silicon; short channel silicon between insulator MOSFET; thermal effects; Charge carrier processes; Educational institutions; Insulation; Leakage current; MOSFETs; Permittivity; Poisson equations; Proposals; Semiconductor films; Silicon on insulator technology;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378307
