DocumentCode
3060504
Title
A high performance MOSFET on selective buried oxide with improved short channel effects
Author
Qureshi, S. ; Loan, Sajad A. ; Iyer, S.S.K.
Author_Institution
Dept. of Electr. Eng., Indian Inst. of Technol. Kanpur, Kanpur, India
fYear
2009
fDate
9-11 Dec. 2009
Firstpage
1
Lastpage
2
Abstract
In this paper we proposed and did an extensive simulation study of a new SELBOX device using a 2D device simulator MEDICI. The proposed structure retains all the advantages of the SELBOX structure and at the same time reduces SCEs significantly and makes further scaling of the device possible in nanometer regime. The proposed device is a partial ground plane (PGP) based MOSFET on SELBOX.
Keywords
MOSFET; semiconductor device models; 2D device simulator; MEDICI; SELBOX; high performance MOSFET; partial ground plane; selective buried oxide; short channel effects; CMOS technology; Couplings; Educational institutions; MOS devices; MOSFET circuits; Medical simulation; Nanoscale devices; Silicon; Thermal degradation; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location
College Park, MD
Print_ISBN
978-1-4244-6030-4
Electronic_ISBN
978-1-4244-6031-1
Type
conf
DOI
10.1109/ISDRS.2009.5378308
Filename
5378308
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