Title :
Improvement of static noise margin in SRAM by post-fabrication self-convergence technique
Author :
Suzuki, Makoto ; Saraya, Takuya ; Shimizu, Ken ; Sakurai, Takayasu ; Hiramoto, Toshiro
Author_Institution :
Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan
Abstract :
The concept of the post-fabrication self-convergence scheme is applied to improve the SRAM stability. It is shown by measurement-based simulation that static noise margin (SNM) of SRAM are self-improved by selective non-volatile Vth shift of transistor in each cell.
Keywords :
MOS memory circuits; MOSFET; SRAM chips; circuit stability; integrated circuit modelling; integrated circuit noise; SRAM stability; measurement-based simulation; nMOS transistor; nonvolatile Vth shift; pMOS transistor; post-fabrication self-convergence technique; static noise margin; Circuit stability; Degradation; Educational institutions; MOS devices; Magnetic tunneling; Noise measurement; Random access memory; Stress; Substrate hot electron injection; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378309
