Title :
On the accuracy of current TCAD hot carrier injection models for the simulation of degradation phenomena in nanoscale devices
Author :
Zaka, A. ; Rafhay, Q. ; Palestri, P. ; Clerc, R. ; Rideau, D. ; Selmi, L. ; Tavernier, C. ; Jaouen, H.
Author_Institution :
STMicroelectronics, Crolles, France
Abstract :
The aim of this paper is to assess the capability of TCAD tools to accurately model hot electron injection in advanced device architecture versus state of the art full band Monte Carlo.
Keywords :
Monte Carlo methods; charge injection; hot carriers; random-access storage; technology CAD (electronics); Monte Carlo method; hot carrier injection models; hot electron injection; nanoscale devices; nonvolatile storage; technology CAD; Analytical models; Context modeling; Degradation; Distribution functions; Hot carrier injection; Monte Carlo methods; Nanoscale devices; Nonuniform electric fields; Predictive models; Secondary generated hot electron injection;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378310
