DocumentCode
3060572
Title
On the accuracy of current TCAD hot carrier injection models for the simulation of degradation phenomena in nanoscale devices
Author
Zaka, A. ; Rafhay, Q. ; Palestri, P. ; Clerc, R. ; Rideau, D. ; Selmi, L. ; Tavernier, C. ; Jaouen, H.
Author_Institution
STMicroelectronics, Crolles, France
fYear
2009
fDate
9-11 Dec. 2009
Firstpage
1
Lastpage
2
Abstract
The aim of this paper is to assess the capability of TCAD tools to accurately model hot electron injection in advanced device architecture versus state of the art full band Monte Carlo.
Keywords
Monte Carlo methods; charge injection; hot carriers; random-access storage; technology CAD (electronics); Monte Carlo method; hot carrier injection models; hot electron injection; nanoscale devices; nonvolatile storage; technology CAD; Analytical models; Context modeling; Degradation; Distribution functions; Hot carrier injection; Monte Carlo methods; Nanoscale devices; Nonuniform electric fields; Predictive models; Secondary generated hot electron injection;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location
College Park, MD
Print_ISBN
978-1-4244-6030-4
Electronic_ISBN
978-1-4244-6031-1
Type
conf
DOI
10.1109/ISDRS.2009.5378310
Filename
5378310
Link To Document