A new hopping model for transport in chalcogenide glasses

Chalcogenide compounds (GST) are extensively being investigated as active materials in phase change memories (PCM). Experimental structural data and charge transport features of GST devices suggest that electrical conduction in the amorphous phase is controlled by defects and trapped carriers. A M1-3D, self-consistent Monte Carlo code has been implemented to the purpose of calculating carrier transport in GST due to hopping. An important part of the model is the transition probability per unit time between traps which, in the present implementation, is that by Miller and Abrahams . As shown, such a model exhibits some inconsistencies that led the authors to work out a new model. The outcome of such an investigation is reported in this paper.