A new hopping model for transport in chalcogenide glasses

Author

Rudan, Massimo ; Giovanardi, Fabio ; Piccinini, Enrico ; Buscemr, F. ; Brunetti, Rossella ; Jacoboni, Carlo

Author_Institution

ARCES-Univ. of Bologna, Bologna, Italy

fYear

2009

fDate

9-11 Dec. 2009

Firstpage

1

Lastpage

2

Abstract

Chalcogenide compounds (GST) are extensively being investigated as active materials in phase change memories (PCM). Experimental structural data and charge transport features of GST devices suggest that electrical conduction in the amorphous phase is controlled by defects and trapped carriers. A M1-3D, self-consistent Monte Carlo code has been implemented to the purpose of calculating carrier transport in GST due to hopping. An important part of the model is the transition probability per unit time between traps which, in the present implementation, is that by Miller and Abrahams . As shown, such a model exhibits some inconsistencies that led the authors to work out a new model. The outcome of such an investigation is reported in this paper.

Keywords

Monte Carlo methods; carrier mobility; chalcogenide glasses; hopping conduction; phase change memories; probability; GST device; Ge₂Sb₂Te₅; M1-3D; amorphous phase; carrier transport; chalcogenide glasses; charge transport; electrical conduction; hopping model; phase change memories; self-consistent Monte Carlo code; transition probability; Amorphous materials; Conducting materials; Educational institutions; Electron traps; Glass; Jacobian matrices; Phase change materials; Phonons; Physics; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2009. ISDRS '09. International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-6030-4

Electronic_ISBN

978-1-4244-6031-1

Type

conf

DOI

10.1109/ISDRS.2009.5378320

Filename

5378320