Investigation of vertical scaling on breakdown voltage and presentation of analytical model for electric field distribution in SOI RESURF LDMOSFETs

Achieving a high breakdown voltage on relatively SOI active layers has been a major concern in the last few years. To address this issue, the reduced surface field (RESURF) principle has been extended to SOI power devices, which are designed to sustain high voltage. In this paper, the effect of vertical scaling on breakdown voltage of Silicon on Insulator Reduce Surface Field Lateral Double-diffused MOSFET (SOI RESURF LDMOSFETs) is investigated. Furthermore, a compact model is presented which is useful for understanding breakdown mechanism at limiting case of ultra-thin-film as well as ultra-thick-film SOI MOSFET´s. Two-dimensional simulations verify this model.