DocumentCode :
3060796
Title :
Cryogenic matching performance of 90 nm MOSFETs
Author :
Appaswamy, Aravind ; Chakraborty, Partha ; Cressler, John D.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fYear :
2009
fDate :
9-11 Dec. 2009
Firstpage :
1
Lastpage :
2
Abstract :
While the matching properties of MOSFETs have been extensively studied, the impact of temperature on matching remains poorly understood. Recent efforts at understanding the effects of temperature on matching report improved matching at higher temperatures. This paper examines the impact of cryogenic temperatures on the matching performance of a 90 nm bulk CMOS technology. Cryogenic operation improves many of the MOSFET performance metrics and cryogenic MOSFETs have been shown to achieve lower broadband noise at cryogenic temperatures, opening up the possibility of their application in radio astronomy that require very low noise.
Keywords :
MOSFET; cryogenic electronics; semiconductor device noise; semiconductor device packaging; thermal management (packaging); MOSFET matching properties; bulk CMOS technology; cryogenic matching; radio astronomy; size 90 nm; CMOS technology; Cooling; Cryogenics; Educational institutions; Extraterrestrial measurements; Fluctuations; MOSFETs; Temperature sensors; Threshold voltage; Transconductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
Type :
conf
DOI :
10.1109/ISDRS.2009.5378322
Filename :
5378322
Link To Document :
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