DocumentCode :
3060835
Title :
Three-color photodetector based on quantum dots and resonant-tunneling diodes coupled with conductive polymers
Author :
Liao, Sicheng ; Sun, Ke ; Dutta, Mitra ; Stroscio, Michael A.
fYear :
2009
fDate :
9-11 Dec. 2009
Firstpage :
1
Lastpage :
2
Abstract :
Recently a new photodetector design based on quantum dots and resonant-tunneling diode (QDRTD) was proposed by Shields et al. which demonstrated high detection efficiency and a resolution to the single photon level. Different from the avalanche photo diode (APD) based photodetector, the detection mechanism of this device is to sense the change of the resonant tunneling current across the double barrier quantum well (DBQW) caused by the capture of photon-generated holes by a layer of self-assembled quantum dots (QDs) adjacent to the quantum well.
Keywords :
avalanche photodiodes; photodetectors; resonant tunnelling diodes; semiconductor quantum dots; semiconductor quantum wells; avalanche photo diode; conductive polymers; double barrier quantum well; photodetector; quantum dots; resonant-tunneling diodes; Absorption; Diodes; Educational institutions; Electron emission; Photodetectors; Polymers; Quantum computing; Quantum dots; Resonance; Resonant tunneling devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
Type :
conf
DOI :
10.1109/ISDRS.2009.5378324
Filename :
5378324
Link To Document :
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