Title :
A nonlinear model of the power MESFET including temperature and breakdown effects
Author :
Rizzoli, V. ; Costanzo, A. ; Cecchetti, C. ; Chiarini, A.
Author_Institution :
Dipt. di Elettronica, Inf. e Sistemistica, Bologna Univ., Italy
Abstract :
The paper discusses a new large-signal MESFET model based on DC, S-parameter and nonlinear measurements. Physical constraints incorporated in the constitutive relations guarantee the model consistency in large-signal operation and improve the reliability of the parameter extraction process. Forward and reverse (breakdown) gate conduction effects are modeled from nonlinear data. Extensive comparisons with experimental results are presented.
Keywords :
S-parameters; electric breakdown; equivalent circuits; microwave field effect transistors; microwave power transistors; power MESFET; semiconductor device models; DC measurements; S-parameter measurements; breakdown effects; forward gate conduction effects; large-signal MESFET model; nonlinear measurements; nonlinear model; parameter extraction process; power MESFET; reverse gate conduction effects; temperature effects; Circuit simulation; Data mining; Electric breakdown; MESFETs; Microwave devices; Parameter extraction; Scattering parameters; Temperature; Topology; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4471-5
DOI :
10.1109/MWSYM.1998.700683
