Title :
A simplified large-signal HBT model for RF circuit design
Author :
Ke Lu ; Xiangdong Zhang ; Henderson, G.N.
Author_Institution :
Corp. R&D Center, AMP M/A-COM Inc., Lowell, MA, USA
Abstract :
A simplified version of UCD HBT model has been presented in this paper. Two nonlinear resistors in UCD model are replaced by linear resistors. Three new nodes are added to the model which allows one to model the thermal interaction between emitter fingers in a multi-cell power HBT. A scaling factor is also included. All model parameters can be extracted by a group of standard DC and small-signal S-parameters measurements. Large-signal measurement results, such as power-sweep and intermodulation at several different bias points are used to verify the new model. The agreement between simulated and measured results is excellent.
Keywords :
S-parameters; UHF bipolar transistors; equivalent circuits; heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor device models; RF circuit design; S-parameters measurements; emitter fingers; intermodulation measurement; large-signal HBT model; large-signal measurement results; model parameters extraction; multi-cell power HBT; power-sweep measurement; scaling factor; simplified UCD model; thermal interaction; Capacitance; Circuit synthesis; Data mining; Electrical resistance measurement; Heterojunction bipolar transistors; Integrated circuit modeling; Predictive models; Radio frequency; Temperature; Thermal resistance;
Conference_Titel :
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4471-5
DOI :
10.1109/MWSYM.1998.700684
