A simplified large-signal HBT model for RF circuit design

Author

Ke Lu ; Xiangdong Zhang ; Henderson, G.N.

Author_Institution

Corp. R&D Center, AMP M/A-COM Inc., Lowell, MA, USA

Volume

3

fYear

1998

fDate

7-12 June 1998

Firstpage

1607

Abstract

A simplified version of UCD HBT model has been presented in this paper. Two nonlinear resistors in UCD model are replaced by linear resistors. Three new nodes are added to the model which allows one to model the thermal interaction between emitter fingers in a multi-cell power HBT. A scaling factor is also included. All model parameters can be extracted by a group of standard DC and small-signal S-parameters measurements. Large-signal measurement results, such as power-sweep and intermodulation at several different bias points are used to verify the new model. The agreement between simulated and measured results is excellent.

Keywords

S-parameters; UHF bipolar transistors; equivalent circuits; heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor device models; RF circuit design; S-parameters measurements; emitter fingers; intermodulation measurement; large-signal HBT model; large-signal measurement results; model parameters extraction; multi-cell power HBT; power-sweep measurement; scaling factor; simplified UCD model; thermal interaction; Capacitance; Circuit synthesis; Data mining; Electrical resistance measurement; Heterojunction bipolar transistors; Integrated circuit modeling; Predictive models; Radio frequency; Temperature; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1998 IEEE MTT-S International

Conference_Location

Baltimore, MD, USA

ISSN

0149-645X

Print_ISBN

0-7803-4471-5

Type

conf

DOI

10.1109/MWSYM.1998.700684

Filename

700684