A novel distortion analysis method for amplifiers considering frequency characteristics

Author

Horiguchi, K. ; Yamauchi, K. ; Mori, K. ; Nakayama, M. ; Takagi, T.

Author_Institution

Inf. Technol. R&D Center, Mitsubishi Electr. Corp., Kanagawa, Japan

Volume

3

fYear

1998

fDate

7-12 June 1998

Firstpage

1619

Abstract

This paper proposed a novel distortion analysis method for amplifiers considering frequency characteristics. In this method, a frequency-dependent nonlinear amplifier is represented with a model, which consists of a frequency-independent nonlinear amplifier and input/output filters. Time-domain analysis using a single-carrier method, which uses single-carrier amplitude and phase distortion of an amplifier, is carried out for the frequency-independent amplifier, and frequency-domain analysis is applied to the filters. We calculate the third-order intermodulation of a GaAs MESFET amplifier with this method and the harmonic balance method. The results are in good agreement.

Keywords

amplifiers; electric distortion; frequency-domain analysis; intermodulation distortion; nonlinear network analysis; time-domain analysis; GaAs MESFET amplifier; distortion analysis method; frequency characteristics; frequency-dependent nonlinear amplifier; frequency-domain analysis; frequency-independent nonlinear amplifier; input/output filters; phase distortion; single-carrier amplitude; single-carrier method; third-order intermodulation; time-domain analysis; Bandwidth; Broadband amplifiers; Frequency dependence; Frequency domain analysis; Gallium arsenide; MESFETs; Nonlinear distortion; Phase distortion; Power harmonic filters; Signal analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1998 IEEE MTT-S International

Conference_Location

Baltimore, MD, USA

ISSN

0149-645X

Print_ISBN

0-7803-4471-5

Type

conf

DOI

10.1109/MWSYM.1998.700687

Filename

700687