Title :
Graphene nanoelectronics
Author_Institution :
IBM T.J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
In this paper, the graphene nanoelectronics progress in synthesizing wafer-scale monolayer-controlled graphene and fabricating high-speed graphene FETs (GFET) with the highest value reported cut-off frequency (f¿) approaching 100 GHz was reported. Epitaxial growth was investigated to produce wafer-scale, high-quality graphene on SiC substrate. Low-energy electron diffraction microscopy, electron diffraction, Raman spectroscopy, and AFM were used for analysis. It was observed that the 350-nm-gate exfoited GFET yields the highest cut-off frequency value reported for any graphene devices to date. Devices on high quality epitaxially-grown graphene (1-2 layers) also exhibit the room temperature Hall mobilities up to 1450 (gated) and 1575 (ungated) cm2 V-1s-1 and the record high epitaxial GFET f¿= 24 GHz with LG=500 nm. IBM has demonstrated GFET performance well above Si MOSFET f¿-Lg trend shown in 2008 International Roadmap for Semiconductors (ITRS).
Keywords :
Hall mobility; MOSFET; Raman spectra; atomic force microscopy; elemental semiconductors; epitaxial growth; field effect transistors; graphene; low energy electron diffraction; monolayers; nanoelectronics; semiconductor growth; silicon; silicon compounds; wide band gap semiconductors; AFM; C-SiC; Hall mobility; MOSFET; Raman spectroscopy; Si; SiC; cut-off frequency; epitaxial growth; exfoited GFET; graphene; graphene devices; high-speed graphene FETs; low-energy electron diffraction microscopy; nanoelectronics; size 350 nm; temperature 293 K to 298 K; wafer-scale high-quality graphene; wafer-scale monolayer-controlled graphene; Atomic force microscopy; Cutoff frequency; Diffraction; Electrons; Epitaxial growth; FETs; Frequency synthesizers; Nanoelectronics; Silicon carbide; Substrates;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378331
