On the systematic analysis of ring-delay performance using statistical behavior model

Author

Liang, Q. ; Greene, B. ; Han, S.-J. ; Wang, Y. ; Liang, Y. ; Cai, M. ; Yang, F. ; Amarnath, K. ; Johnson, J. ; Nowak, E. ; Oldiges, P. ; Henson, W. ; Maciejewski, E. ; Narasimha, S. ; Leobandung, E. ; Angello, P.

Author_Institution

IBM SRDC, Hopewell Junction, NY, USA

fYear

2009

fDate

9-11 Dec. 2009

Firstpage

1

Lastpage

2

Abstract

A simple statistical behavior ring-delay model is proposed for the first time. Based on this model, the correlation between FETs´ DC drive currents and AC performance (e.g., delay of ring oscillators) under different scenarios in 32 nm process technology are systematically studied. The extracted model coefficients trend helps to gain deeper insight on the nodal voltage waveform and impacts of the FETs´ DC/AC components. This model is proved to be a novel characterization technique and process monitor to bridge the AC-DC performance and provide guidelines in performance optimization.

Keywords

field effect transistors; oscillators; statistical analysis; AC component; AC-DC performance; DC drive current; FET; nodal voltage waveform; ring oscillator; ring-delay performance; size 32 nm; statistical behavior model; Capacitance; Delay effects; FETs; Hardware; Integral equations; Inverters; Performance analysis; Predictive models; Statistical analysis; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2009. ISDRS '09. International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-6030-4

Electronic_ISBN

978-1-4244-6031-1

Type

conf

DOI

10.1109/ISDRS.2009.5378332

Filename

5378332