Title :
Group-IV heteroepitaxial films for optoelectronic applications
Author :
Oehme, M. ; Werner, J. ; Kasper, E. ; Schulze, J.
Author_Institution :
Inst. of Semicond. Eng., Univ. of Stuttgart, Stuttgart, Germany
Abstract :
The molecular beam epitaxy (MBE) is a powerful technology for the manufacturing of group-IV heteroepitaxial films with doping concentrations ranging from 1014cm-3 to solubility and thicknesses down to a few monolayers. Combined with a CMOS-compatible (CMOS: complementary metal-oxide-semiconductor) device technology novel device concepts for high-speed electronics and optoelectronics based on crystalline group-IV-alloys as high speed Ge infrared detectors, Esaki-tunneling diodes, CMOS-compatible Esaki-tunneling field-effect transistors or impact-ionization MOSFETs can be manufactured, tested and studied.
Keywords :
germanium; infrared detectors; integrated optoelectronics; molecular beam epitaxial growth; optoelectronic devices; p-i-n photodiodes; photodetectors; semiconductor epitaxial layers; semiconductor heterojunctions; silicon; CMOS-compatible device technology; Ge infrared detectors; Si-Ge; group-IV heteroepitaxial films; molecular beam epitaxy; optoelectronic applications; p-i-n photodetectors; CMOS technology; Crystallization; Diodes; Doping; Electronic equipment testing; FETs; High-speed electronics; Infrared detectors; Manufacturing; Molecular beam epitaxial growth;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378336
