Title :
Record power added efficiency, low voltage GOI (GaAs On Insulator) MESFET technology for wireless applications
Author :
Parikh, P. ; Ibbetson, J. ; Mishra, Umesh ; Pusl, J.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
A record high power added efficiency is obtained from a GaAs On Insulator (GOI) MESFET. Al/sub 2/O/sub 3/ obtained by the wet oxidation of Al/sub 0.98/GaAs in steam, is used as the insulating buffer layer. The insulating buffer results in elimination of buffer leakage and enhanced charge control. 0.35 /spl mu/m gate length GOI MESFETs exhibit a PAE of 72% at a drain voltage of 3 Volts at 4 GHz.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; oxidation; radio equipment; semiconductor-insulator boundaries; 0.35 micron; 3 V; 4 GHz; 72 percent; GaAs On Insulator; GaAs-Al/sub 2/O/sub 3/; insulating buffer layer; low voltage GOI MESFET technology; power added efficiency; wet oxidation; wireless application; Buffer layers; Cable insulation; Etching; Gallium arsenide; Gold; High power amplifiers; Low voltage; MESFETs; Oxidation; Space technology;
Conference_Titel :
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4471-5
DOI :
10.1109/MWSYM.1998.700693
