Title :
A 2.4 V single supply pseudomorphic MODFET MMIC power amplifier for digital cordless phones
Author :
Yokoyama, T. ; Nishijima, M. ; Kunihisa, T. ; Yamamoto, S. ; Ishikawa, O.
Author_Institution :
Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan
Abstract :
A 2.4 V single supply pseudomorphic MODFET MMIC power amplifier has been developed for 1.9 GHz Japanese Personal Handy-phone System (PHS). The MMIC exhibits very low current of 146 mA and low adjacent channel leakage power ratio of 55 dBc at output power of 20.5 dBm and 2.4 V single supply.
Keywords :
HEMT integrated circuits; MMIC power amplifiers; cordless telephone systems; digital radio; telephone sets; 1.9 GHz; 2.4 V; Japanese Personal Handy-phone System; adjacent channel leakage power ratio; digital cordless phone; single supply pseudomorphic MODFET MMIC power amplifier; FETs; Gallium arsenide; HEMTs; Laboratories; Low voltage; MMICs; MODFETs; Power amplifiers; Telephone sets; Transconductance;
Conference_Titel :
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4471-5
DOI :
10.1109/MWSYM.1998.700695
