Title :
NO2 sensitivity of wide area SiC and epitaxial graphene on SiC substrates
Author :
Qazi, Muhammad ; Nomani, Md W. ; Chandrashekhar, M.V.S. ; Koley, Goutam
Author_Institution :
Dept. of Electr. Eng., Univ. of South Carolina, Columbia, SC, USA
Abstract :
In this work, microcantilever based electrostatic force microscopy is applied to find out the surface work function (SWF) changes of wide area SiC thin films with the adsorption of NO2 molecules. Any sensitivity variation between Si and C faces of SiC and also between undoped and doped SiC is also discussed.
Keywords :
high-temperature electronics; nitrogen compounds; semiconductor thin films; silicon compounds; wide band gap semiconductors; NO2 sensitivity; SiC; epitaxial graphene; microcantilever based electrostatic force microscopy; surface work function; wide area silicon carbide; Conducting materials; Educational institutions; Electrons; Electrostatics; Gas detectors; Semiconductor thin films; Silicon carbide; Substrates; Temperature sensors; Thermal conductivity;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378345
