DocumentCode
3061423
Title
An improvement of IM and power of high power amplifiers using RC-paralleled circuits with frequency selectivity
Author
Tarui, Y. ; Ogura, S. ; Seino, K. ; Itoh, Y.
Author_Institution
Inf. Technol. R&D Center, Mitsubishi Electr. Corp., Kanagawa, Japan
Volume
3
fYear
1998
fDate
7-12 June 1998
Firstpage
1655
Abstract
This paper describes the design method to improve IM and power of high power amplifiers by employing a RC-paralleled circuit with frequency selectivity in the design of input matching circuits. The RC-paralleled circuit decreases gain at low frequencies where the power level of inter-modulated signals becomes high, leading to a significant improvement of IM and power.
Keywords
intermodulation; power amplifiers; RC-paralleled circuit; frequency selectivity; input matching circuit; intermodulation; power amplifier; Circuits; FETs; Frequency; Gallium arsenide; High power amplifiers; Impedance matching; Linearity; Power amplifiers; Resistors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location
Baltimore, MD, USA
ISSN
0149-645X
Print_ISBN
0-7803-4471-5
Type
conf
DOI
10.1109/MWSYM.1998.700696
Filename
700696
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