Title :
Dependence on repetition rate in post-laser annealing process of ion-implanted ZnO nanorods using KrF excimer laser
Author :
Shimogaki, T. ; Ofuji, T. ; Higashihata, M. ; Ikenoue, Hiroshi ; Nakamura, Daisuke ; Asano, Takashi ; Okada, Takashi
Author_Institution :
Inf. Sci. & Electr. Eng., Kyushu Univ., Fukuoka, Japan
fDate :
June 30 2013-July 4 2013
Abstract :
P-implanted ZnO nanorods were annealed by a KrF excimer laser at different repetition rate. The entire implanted region of ZnO nanorods was annealed beyond the optical-absorption length at high repetition rate.
Keywords :
II-VI semiconductors; excimer lasers; ion implantation; laser beam annealing; nanorods; wide band gap semiconductors; zinc compounds; KrF; ZnO:P; excimer laser; ion implantation; nanorods; optical-absorption length; post-laser annealing; repetition rate; Annealing; Laser theory; Optical device fabrication; Optical pulses; Scanning electron microscopy; Zinc oxide;
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location :
Kyoto
DOI :
10.1109/CLEOPR.2013.6600321
