Title :
Influence of grit-size and sintering temperature on SiC target during pulsed laser deposition
Author :
Bhimasingu, Venkataramesh ; Pannirselvam, Emmanuel ; Vasa, Nilesh J.
Author_Institution :
Indian Inst. of Technol. Madras, Chennai, India
fDate :
June 30 2013-July 4 2013
Abstract :
Pulsed laser deposition of SiC thin films on N-type Si (100) substratewas studied by using an Nd3+: YAG laser. SiC target with agrit-count of 500 and sintered at 1600 °C was found suitable.
Keywords :
laser sintering; neodymium; pulsed laser deposition; silicon compounds; solid lasers; wide band gap semiconductors; N-type substrate; SiC; YAG:Nd3+; grit-size influence; pulsed laser deposition; sintering temperature; temperature 1600 C; temperature 500 C; thin films; Laser sintering; Pulsed laser deposition; Semiconductor lasers; Silicon; Silicon carbide; Substrates; Temperature; photovoltaics; pulsed laser deposition; semiconductor thin film; silicon carbide;
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location :
Kyoto
DOI :
10.1109/CLEOPR.2013.6600323
