DocumentCode
3061995
Title
High power millimeter and submillimeter wave material processing
Author
Mitsudo, S. ; Hoshizuki, H. ; Matsuura, K. ; Saji, T. ; Idehara, T. ; Glyain, M. ; Eremeev, A. ; Zapevalov, V. ; Kitano, A. ; Nishi, H. ; Ishibashi, J.
Author_Institution
Res. Center for Dev. of Far-Infrared Region, Fukui Univ., Japan
fYear
2004
fDate
27 Sept.-1 Oct. 2004
Firstpage
727
Lastpage
728
Abstract
Boron carbide (B4C) is one of advanced materials and is being used in a wide rage of applications. The unique feature of this material is its large neutron-absorbing cross-section. Some of its most prominent applications are controlling rods in nuclear reactors and radiation protection. 24 GHz microwave processing for B4C ceramics were performed under flowing argon gas using the sintering system. The sintered samples were characterized by the density, the shrinkage and SEM micrographs of fracture surface. Above the temperature of 2000°C, the shrinkage and the grain grows are observed.
Keywords
boron compounds; ceramics; grain growth; gyrotrons; radiation protection; scanning electron microscopy; sintering; 24 GHz; B4C; B4C ceramics; SEM micrographs; boron carbide material; fracture surface; grain growth; high power millimeter; microwave processing; neutron absorbing cross section; nuclear reactors; radiation protection; shrinkage; sintering system; submillimeter wave material processing; Boron; Ceramics; Conducting materials; Electromagnetic heating; Electron beams; Gyrotrons; Laboratories; Materials processing; Powders; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004. Conference Digest of the 2004 Joint 29th International Conference on
Print_ISBN
0-7803-8490-3
Type
conf
DOI
10.1109/ICIMW.2004.1422298
Filename
1422298
Link To Document