Title :
Ultrafast carrier trapping and high resistivity of MeV energy ion implanted GaAs
Author :
Jagadish, C. ; Tan, H.H. ; Krotkus, A. ; Marcinkevicius, S. ; Korona, K. ; Jasinski, J. ; Kaminska, M.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
fDate :
29 Apr-3 May 1996
Abstract :
The lifetime and resistivity of semi-insulating GaAs implanted with various ions at MeV energies and doses and subsequently annealed at 600°C are studied and correlated with the structural and strain field properties. Very short lifetimes were achievable in all samples implanted with As, Ga, Si or O ions. However, high resistivity was only achievable in cases where the implanted ions were not electrically activated as dopants after annealing. In the case of O implants, extremely high resistivity was obtained, presumably due to the additional deep levels associated with O
Keywords :
III-V semiconductors; annealing; arsenic; carrier lifetime; carrier mobility; electrical resistivity; gallium; gallium arsenide; ion implantation; oxygen; semiconductor doping; silicon; 600 C; GaAs:O,Si,As,Ga; MeV energy ion implanted GaAs; annealed; deep levels; high resistivity; lifetime; strain field properties; ultrafast carrier trapping; Annealing; Capacitive sensors; Conducting materials; Conductivity; Gallium arsenide; Implants; Physics; Power engineering and energy; Semiconductor materials; Temperature;
Conference_Titel :
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location :
Toulouse
Print_ISBN :
0-7803-3179-6
DOI :
10.1109/SIM.1996.570873
