Title :
Synthesis and analysis of SiGeC
Author :
Kouvetakis, John ; Mayer, Jonas
Author_Institution :
Dept. of Chem. & Biochem., Arizona State Univ., Tempe, AZ, USA
Abstract :
Chemical-vapor deposition (CVD) techniques have been used to form heteroepitaxial layers of SiGeC on (100)Si. The epitaxial layers were analyzed by RBS, C-resonance, channeling, SIMS, X-ray diffraction and high resolution transmission electron microscopy. Novel binary and ternary phases have been formed by CVD: Si4C, Si3GeC4 (sphalerite), Ge4C and (Si2Ge)Cx. The approach combines novel precursor chemistries and modern deposition techniques (ultrahigh vacuum CVD)
Keywords :
Rutherford backscattering; channelling; chemical vapour deposition; crystal structure; germanium compounds; phase equilibrium; secondary ion mass spectra; semiconductor epitaxial layers; semiconductor growth; silicon compounds; transmission electron microscopy; vapour phase epitaxial growth; wide band gap semiconductors; (100)Si; (Si2Ge)Cx; C-resonance; CVD; Ge4C; RBS; SIMS; Si; Si2GeC; Si3GeC4; Si4C; SiGeC; X-ray diffraction; binary phases; channeling; chemical-vapor deposition; heteroepitaxial layers; high resolution transmission electron microscopy; precursor chemistries; sphalerite; synthesis; ternary phases; ultrahigh vacuum CVD; Chemical technology; Chemistry; Conducting materials; Epitaxial layers; Lattices; Microelectronics; Photonic band gap; Silicon carbide; Thermal conductivity; X-ray diffraction;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.785764
