DocumentCode
306243
Title
An electrical and Raman spectroscopic study of a-GaAs1-xNx/Si heterostructures
Author
Aguir, K. ; Bandet, J. ; Lollman, D. ; Roumiguières, B. ; Carchano, H.
Author_Institution
Lab. EPCM, Univ. d´´Aix-Marseille III, France
fYear
1996
fDate
29 Apr-3 May 1996
Firstpage
105
Lastpage
110
Abstract
We report on electrical properties and Raman scattering of amorphous GaAs1-xNx deposited on p-doped Si substrates. We have investigated the dielectric character of GaAs1-xNx in view of its applications in GaAs-based technologies. The a-GaAs1-xNx thin films are obtained by reactive RF sputtering of a GaAs target. The electrical characteristics of the a-GaAs1-xNx/c-Si(p) heterostructures present a MIS-like structure behaviour with some imperfections. Raman scattering points out that a-GaAs1-xNx is a wide gap material which is formed by the substitution of arsenic by nitrogen in the GaAs network
Keywords
III-V semiconductors; MIS structures; Raman spectra; amorphous semiconductors; elemental semiconductors; gallium arsenide; gallium compounds; semiconductor heterojunctions; semiconductor thin films; silicon; sputtered coatings; wide band gap semiconductors; GaAsN-Si; MIS-like structure behaviour; Raman scattering; Raman spectroscopic study; Si; a-GaAs1-xNx/Si heterostructures; amorphous semiconductor; dielectric character; electrical characteristics; electrical study; p-doped Si substrates; reactive RF sputtering; thin films; wide gap material; Amorphous materials; Dielectric substrates; Dielectric thin films; Electric variables; Gallium arsenide; Nitrogen; Radio frequency; Raman scattering; Spectroscopy; Sputtering;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location
Toulouse
Print_ISBN
0-7803-3179-6
Type
conf
DOI
10.1109/SIM.1996.570907
Filename
570907
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