Title :
ZnCdSe-ZnSe heterostructures grown by MOVPE: influence of the cadmium precursor
Author :
Sanchez, S. ; Cloitre, T. ; Bigenwald, P. ; Chergui, A. ; Honerlague, B. ; Aulombard, R.L.
Author_Institution :
Groupe d´´Etudes des Semicond., Univ. des Sci. et Tech. du Languedoc, Montpellier, France
fDate :
29 Apr-3 May 1996
Abstract :
Graded index separate confinement heterostructures (GRIN-SCH) for microgun blue-green laser were grown by MOVPE. A first study was carried out using selenium hydride, dimethyl cadmium and two dimethylzine adducts as Se, Cd and Zn precursor respectively. This combination leads to intense prereactions and poor layer morphology. To limit this problem we have then used the tetrahydrothiophene:dimethylcadmium adduct. We have first investigated the quality of thick ZnCdSe layers grown using this adduct. GRIN-SCH structures grown using the two cadmium metalorganics were studied using photoluminescence and optical pumping experiments. Stimulated emission was observed for the two kind of samples
Keywords :
II-VI semiconductors; cadmium compounds; gradient index optics; optical pumping; photoluminescence; semiconductor growth; semiconductor heterojunctions; semiconductor lasers; stimulated emission; vapour phase epitaxial growth; wide band gap semiconductors; zinc compounds; Cd precursor; GRIN-SCH; MOVPE; ZnCdSe-ZnSe; ZnCdSe-ZnSe heterostructures; cadmium metalorganics; dimethyl cadmium; dimethylzine adducts; graded index separate confinement heterostructures; layer morphology; microgun blue-green laser; optical pumping; photoluminescence; prereactions; selenium hydride; stimulated emission; tetrahydrothiophene:dimethylcadmium adduct; Cadmium; Epitaxial growth; Epitaxial layers; Morphology; Optical pumping; Pump lasers; Semiconductor device doping; Semiconductor lasers; Surface emitting lasers; Zinc compounds;
Conference_Titel :
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location :
Toulouse
Print_ISBN :
0-7803-3179-6
DOI :
10.1109/SIM.1996.570914
