Title :
The challenges for physical limitations in Si microelectronics
Author :
Wang, Yangyuan ; Han, Ruqi ; Liu, Xiaoyan ; Kang, Jinfeng
Author_Institution :
Inst. of Microelectron, Peking Univ., Beijing, China
Abstract :
The challenges in further development of Si microelectronics especially MOSFETs into the sub 0.1 μm regime in light of fundamental physical effects and practical consideration are discussed. The key issues of physical limitations in Si microelectronics includes: fundamental physical limitations, material limitations, technology limitations, devices limitations, circuits and system limitations. Several potential alternative devices that may takes us to the outermost limitations of Si MOSFET´s scaling down, such as single electron devices are introduced
Keywords :
VLSI; elemental semiconductors; high field effects; integrated circuit reliability; integrated circuit technology; monolithic integrated circuits; nanotechnology; quantum well devices; silicon; single electron transistors; 0.1 micron; MOSFET scaling down; Si; Si microelectronics; circuit limitations; deep submicron technology; device limitations; fundamental physical limitations; material limitations; physical limitations; quantum electronic devices; single electron devices; system limitations; technology limitations; CMOS technology; Circuits and systems; Crystalline materials; Dielectric materials; Integrated circuit technology; Microelectronics; Semiconductor materials; Silicon; Switches; Thermodynamics;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.785776
