Current-voltage and low frequency noise measurements on LT-InAlAs grown by MBE

Author

Rojo-Romeo, P. ; Letartre, Xavier

fYear

1996

fDate

29 Apr-3 May 1996

Firstpage

167

Lastpage

172

Abstract

The properties of InAlAs layers grown lattice matched to InP by molecular beam epitaxy (MBE) were investigated. For a large range of growth conditions (temperature, V/III beam equivalent pressure ratio, doping level), we have detected 3 deep electron trap families E1, E2, and E3 in the material bandgap. The presence of these traps give rise to a defect-assisted tunneling current in the space-charge region of Schottky diodes at low forward and reverse biases. The observed low frequency l/fl in reverse bias is interpreted in terms of fluctuations of the Schottky barrier height

Keywords

III-V semiconductors; Schottky barriers; aluminium compounds; deep levels; electron traps; energy gap; indium compounds; semiconductor epitaxial layers; space charge; tunnelling; I-V measurements; InAlAs layers; InAlAs-InP; MBE; Schottky barrier height; Schottky diodes; bandgap; beam equivalent pressure ratio; deep electron trap; defect-assisted tunneling current; doping level; forward bias; growth conditions; low frequency noise measurements; reverse bias; space-charge region; Current measurement; Electron traps; Frequency measurement; Indium compounds; Indium phosphide; Lattices; Low-frequency noise; Molecular beam epitaxial growth; Noise measurement; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE

Conference_Location

Toulouse

Print_ISBN

0-7803-3179-6

Type

conf

DOI

10.1109/SIM.1996.570932

Filename

570932