DocumentCode
3062584
Title
Spectral characteristics under various operation conditions of 1.3-μm npn-AlGaInAs/InP transistor laser
Author
Yukinari, Masashi ; Sato, Nobuyoshi ; Nishiyama, Naoto ; Arai, Shigehisa
Author_Institution
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan
fYear
2013
fDate
June 30 2013-July 4 2013
Firstpage
1
Lastpage
2
Abstract
The spectral characteristics of a 1.3-μm npn-AlGaInAs/InP transistor laser were studied by varying collector-base voltage and emitter current. As the results, the peak wavelength shifts as a function of output power by the voltage control and the current control showed opposite behaviors.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared spectra; quantum well lasers; AlGaInAs-InP; collector-base voltage; current control; emitter current; npn transistor laser; operation conditions; output power; spectral characteristics; voltage control; wavelength 1.3 mum; wavelength shifts; Indium phosphide; Lasers; Power amplifiers; Power generation; Temperature measurement; Transistors; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location
Kyoto
Type
conf
DOI
10.1109/CLEOPR.2013.6600364
Filename
6600364
Link To Document