Title :
Photocurrent generation in a silicon waveguide integrated with periodically interleaved p-n junctions
Author :
Haike Zhu ; Linjie Zhou ; Xiaomeng Sun ; Jingya Xie ; Zhi Zou ; Liangjun Lu ; Xinwan Li ; Jianping Chen
Author_Institution :
Dept. of Electron. Eng., Shanghai Jiao Tong Univ., Shanghai, China
fDate :
June 30 2013-July 4 2013
Abstract :
We investigate the photocurrent generation in a silicon waveguide embedded with interleaved p-n junctions. Due to the surface-state absorption and the high built-in electrical-field, the responsivity reaches ~14.9 mA/W and the bandwidth is 11.5 GHz.
Keywords :
optical waveguides; photoelectricity; silicon; Si; bandwidth 11.5 GHz; built-in electrical field; optical waveguide; periodically interleaved p-n junctions; photocurrent generation; surface state absorption; Optical waveguides; P-n junctions; Photoconductivity; Photodetectors; Silicon; Surface waves; Waveguide junctions;
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location :
Kyoto
DOI :
10.1109/CLEOPR.2013.6600365
