DocumentCode
3062619
Title
Ultralow-threshold electrically driven photonic-crystal nanocavity laser
Author
Sato, Takao ; Takeda, Kenji ; Shinya, Akihiko ; Nozaki, Kengo ; Taniyama, H. ; Hasebe, Koichi ; Kakitsuka, Takaaki ; Notomi, M. ; Matsuo, Shoichiro
Author_Institution
NTT Photonics Labs., Atsugi, Japan
fYear
2013
fDate
June 30 2013-July 4 2013
Firstpage
1
Lastpage
2
Abstract
We demonstrate an electrically driven photonic-crystal nanocavity laser with an InAlAs sacrificial layer. The laser exhibits an ultralow threshold current of 7.8 μA and an energy cost of 14 fJ/bit with 12.5-Gbit/s direct modulation.
Keywords
III-V semiconductors; indium compounds; laser cavity resonators; nanophotonics; photonic crystals; semiconductor lasers; InAlAs; bit rate 12.5 Gbit/s; current 7.8 muA; direct modulation; electrically driven photonic-crystal nanocavity laser; energy cost; sacrificial layer; ultralow threshold current; Fiber lasers; Indium compounds; Indium phosphide; Photonics; Semiconductor lasers; Threshold current; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location
Kyoto
Type
conf
DOI
10.1109/CLEOPR.2013.6600366
Filename
6600366
Link To Document