Title :
The effect of cobalt salicide on SOI CMOS radiation characteristics
Author :
Zhang, Xing ; Xi, Xuemei ; Huang, Ru ; Wang, Yangyuan
Author_Institution :
Inst. of Microelctron., Peking Univ., Beijing, China
Abstract :
In this paper we present the total dose radiation characterization of CMOS/SIMOX devices with CoSi2 salicide. Various SIMOX devices, such as with or without CoSi2, are applied during irradiation in order to define the better radiation hardened process for SOI MOSFETs and ring oscillators. As the experimental results show, the application of Co salicide on SOI CMOS circuits not only reduces the source/drain series resistance, but also improves significantly the SOI radiation hardness properties in terms of threshold voltage shift, junction leakage and CMOS ring oscillator propagation delay
Keywords :
CMOS integrated circuits; SIMOX; cobalt compounds; integrated circuit metallisation; radiation hardening (electronics); CMOS/SIMOX devices; Co salicide process; CoSi2; CoSi2 metallisation; SOI CMOS radiation characteristics; SOI MOSFETs; Si; junction leakage; radiation hardened process; ring oscillator propagation delay; source/drain series resistance reduction; threshold voltage shift; total dose radiation characterization; CMOS process; Cobalt; MOSFET circuits; Military aircraft; Oxidation; Propagation delay; Ring oscillators; Silicon; Space technology; Threshold voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.785789
