Title :
Intrinsic limitations of GaAs device cooling for microwave low noise applications
Author :
Miranda Pantoja, J.M. ; Sebastian, J.L. ; Munoz, S.
Author_Institution :
Dept. de Fisica Aplicada III, Univ. Complutense de Madrid, Spain
Abstract :
A simulation at microscopic level of the microwave noise temperature associated to a GaAs resistance at different physical temperatures and far from equilibrium conditions has been performed. The dependence of the noise temperature on the electric field, doping level and physical temperature has been investigated.
Keywords :
III-V semiconductors; cooling; gallium arsenide; microwave devices; semiconductor device models; semiconductor device noise; GaAs; GaAs device cooling; doping level; electric field; microwave noise temperature; nonequilibrium resistance; simulation; Circuit noise; Computational modeling; Cooling; Gallium arsenide; Microscopy; Microwave devices; Noise level; Noise reduction; Semiconductor device noise; Temperature dependence;
Conference_Titel :
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4471-5
DOI :
10.1109/MWSYM.1998.700704
