Title :
Fabrication and testing of integrated ferroelectric capacitors [non-volatile memories]
Author :
Yao Haiping ; Qi, Zliong ; Guobao, Jiang ; Weining, Huang ; Xiaojing, Hong ; Tingao, Tang
Author_Institution :
Dept. of Electron. Eng., Fudan Univ., Shanghai, China
Abstract :
Ferroelectric thin film can be used to fabricate non-volatile memories (FRAM). FRAM based on ferroelectric polarization has a much superior performance compared with that of EEPROM. The key technology of making FRAM is to form integrated ferroelectric thin film capacitors of good quality. One practical approach of forming integrated ferroelectric capacitors on CMOS circuits is described
Keywords :
CMOS memory circuits; ferroelectric capacitors; ferroelectric storage; ferroelectric thin films; integrated circuit testing; integrated memory circuits; random-access storage; thin film capacitors; CMOS circuits; FRAM; fabrication; ferroelectric RAM; ferroelectric thin film; integrated ferroelectric capacitors; nonvolatile memories; testing; thin film capacitors; Capacitors; EPROM; Fabrication; Ferroelectric films; Ferroelectric materials; Nonvolatile memory; Polarization; Random access memory; Testing; Transistors;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.785791
