The total dose effect on two types of CMOS devices

Author

Zhang Zheng-Xuam ; Jin-sheng, Luo ; Yuan Ron-Feng ; Bao-Ping, He ; Jiang Jing-Ho

Author_Institution

Xi´´an Jiaotong Univ., China

fYear

1998

fDate

1998

Firstpage

74

Lastpage

77

Abstract

In this paper the radiation response of two types of CMOS devices exposed to ⁶⁰Co is studied. The two types of CMOS devices were denoted as hardened and unhardened, respectively. Using MOSFET I-V characteristics, threshold-voltage shifts dependence on the radiation dose, voltage shifts due to radiation-induced interface traps and oxide traps dependence on the radiation dose and the density of radiation-induced interface traps dependence on the radiation dose, were analysed under two different dose rates. The dependence of a CMOS inverter´s transfer-voltage shifts on radiation dose was analysed also

Keywords

CMOS integrated circuits; MOSFET; gamma-ray effects; interface states; radiation hardening (electronics); ⁶⁰Co exposure; CMOS devices; CMOS inverter transfer-voltage shifts; CMOSFETs; MOSFET I-V characteristics; NMOSFET; PMOSFET; dose rates; interface traps density; radiation dose; radiation response; radiation-induced interface traps; radiation-induced oxide traps; threshold-voltage shifts dependence; total dose effect; CMOS technology; Interface states; Ionizing radiation; MOS devices; MOSFETs; Performance analysis; Radiation hardening; Semiconductor films; Temperature dependence; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-4306-9

Type

conf

DOI

10.1109/ICSICT.1998.785797

Filename

785797