Title :
The total dose effect on two types of CMOS devices
Author :
Zhang Zheng-Xuam ; Jin-sheng, Luo ; Yuan Ron-Feng ; Bao-Ping, He ; Jiang Jing-Ho
Author_Institution :
Xi´´an Jiaotong Univ., China
Abstract :
In this paper the radiation response of two types of CMOS devices exposed to 60Co is studied. The two types of CMOS devices were denoted as hardened and unhardened, respectively. Using MOSFET I-V characteristics, threshold-voltage shifts dependence on the radiation dose, voltage shifts due to radiation-induced interface traps and oxide traps dependence on the radiation dose and the density of radiation-induced interface traps dependence on the radiation dose, were analysed under two different dose rates. The dependence of a CMOS inverter´s transfer-voltage shifts on radiation dose was analysed also
Keywords :
CMOS integrated circuits; MOSFET; gamma-ray effects; interface states; radiation hardening (electronics); 60Co exposure; CMOS devices; CMOS inverter transfer-voltage shifts; CMOSFETs; MOSFET I-V characteristics; NMOSFET; PMOSFET; dose rates; interface traps density; radiation dose; radiation response; radiation-induced interface traps; radiation-induced oxide traps; threshold-voltage shifts dependence; total dose effect; CMOS technology; Interface states; Ionizing radiation; MOS devices; MOSFETs; Performance analysis; Radiation hardening; Semiconductor films; Temperature dependence; Threshold voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.785797
