DocumentCode
3062773
Title
Microcavity engineering using plasma immersion ion implantation
Author
Chu, Paul K.
Author_Institution
City Univ. of Hong Kong, Kowloon, Hong Kong
fYear
1998
fDate
1998
Firstpage
83
Lastpage
86
Abstract
Microcavities or bubbles formed by hydrogen and helium plasma immersion ion implantation (PIII) possess intriguing properties. For example, they emit light similar to porous silicon, but because they are buried, the optical properties are not affected by surface conditions such as those encountered by conventional porous silicon materials. These bubbles also form excellent internal gettering sites for metallic impurities and are stable even at high temperature. Last but not least, the ion-cut/bonding technology utilizing the mechanical stress created by these microcavities to achieve thin film transfer is used to fabricate silicon-on-insulator (SOI)
Keywords
bubbles; elemental semiconductors; getters; helium; hydrogen; ion implantation; photoluminescence; silicon; silicon-on-insulator; voids (solid); SOI; Si:H; Si:He; bubbles; internal gettering sites; ion-cut/bonding technology; mechanical stress; metallic impurities; microcavities; plasma immersion ion implantation; thin film transfer; Helium; Hydrogen; Microcavities; Optical films; Optical materials; Particle beam optics; Plasma immersion ion implantation; Plasma properties; Silicon on insulator technology; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-4306-9
Type
conf
DOI
10.1109/ICSICT.1998.785800
Filename
785800
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