• DocumentCode
    3062773
  • Title

    Microcavity engineering using plasma immersion ion implantation

  • Author

    Chu, Paul K.

  • Author_Institution
    City Univ. of Hong Kong, Kowloon, Hong Kong
  • fYear
    1998
  • fDate
    1998
  • Firstpage
    83
  • Lastpage
    86
  • Abstract
    Microcavities or bubbles formed by hydrogen and helium plasma immersion ion implantation (PIII) possess intriguing properties. For example, they emit light similar to porous silicon, but because they are buried, the optical properties are not affected by surface conditions such as those encountered by conventional porous silicon materials. These bubbles also form excellent internal gettering sites for metallic impurities and are stable even at high temperature. Last but not least, the ion-cut/bonding technology utilizing the mechanical stress created by these microcavities to achieve thin film transfer is used to fabricate silicon-on-insulator (SOI)
  • Keywords
    bubbles; elemental semiconductors; getters; helium; hydrogen; ion implantation; photoluminescence; silicon; silicon-on-insulator; voids (solid); SOI; Si:H; Si:He; bubbles; internal gettering sites; ion-cut/bonding technology; mechanical stress; metallic impurities; microcavities; plasma immersion ion implantation; thin film transfer; Helium; Hydrogen; Microcavities; Optical films; Optical materials; Particle beam optics; Plasma immersion ion implantation; Plasma properties; Silicon on insulator technology; Stimulated emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    0-7803-4306-9
  • Type

    conf

  • DOI
    10.1109/ICSICT.1998.785800
  • Filename
    785800