Plasma damage and contact resistance

The die size has been shrunk dramatically in the past few years and the requirements for transistor performance have also increased. Therefore, the silicon substrate damage during the plasma etch has become an important issue in current ULSI fabrication. Many device parameters are affected by Si damage such as the junction leakage of contacts and contact resistance etc. In this paper we present the Si damage theory in oxide etching and we also present experimental results using the proposed silicon damage theory to solve the contact resistance problem